Solid crystal machines play a crucial role in the field of semiconductor packaging. As one of the key equipment in semiconductor packaging technology, its performance and accuracy have a significant impact on the quality and performance of semiconductor devices. Not only can it improve production efficiency and reduce production costs, but it can also ensure product quality and reliability.

With the continuous development of power electronics technology, power semiconductor devices play a crucial role in modern power systems. Among them, the Insulated Gate Bipolar Transistor (IGBT) module, as a high-performance power switching device, leads the innovation and development in the field of power electronics. The basic composition of an IGBT module includes multiple IGBT devices, driving circuits, protection circuits, and heat dissipation structures. These components collaborate with each other, enabling IGBT modules to play a critical role in complex power applications. Its working principle is similar to that of a single IGBT device, but their key advantage lies in the integration and collaborative work of multiple devices.

If the black shell and external connection terminals are removed, the IGBT module mainly consists of three components: heat dissipation substrate, DBC substrate, and silicon chip (including IGBT chip and Diode chip), while the rest are mainly solder layers and interconnects used to connect IGBT chip, Diode chip, power terminal, control terminal, and DBC (Direct Bond Copper)

IGBT can be divided into single tube, module, and IPM module according to different packaging forms. IGBT single tube and IGBT module are mainly used in photovoltaic inverters. The IGBT module is internally packaged with multiple IGBT chips and FRD chips through circuits and bridges; The power is higher than that of a single transistor. The difficulty of packaging lies in ensuring the high reliability of the device, and heat dissipation efficiency is a key indicator in module packaging, which directly affects the maximum operating junction temperature of IGBT and thus affects the power density of IGBT.

The core production process of IGBT modules also includes three main parts: chip design, wafer manufacturing, packaging and testing, and module design, each with its own technical difficulties. Packaging is the integration and packaging of multiple IGBTs together, in which the SMT section uses a solidification machine to attach the cut IGBT wafers and tin sheets onto the DBC substrate.

Solid crystal equipment process:

① Classify and place various surface mounted components in the component feeder according to the prescribed method

② Transfer components from the component feeder to the next stage through motor drive and other means

③ Use a wafer mounting machine to mount cut IGBT wafers and tin sheets onto a DBC substrate

④ According to customer requirements, send the DBC substrate with attached wafers into the reflow furnace for heating and melting (electric heating is used for one reflow furnace, with a working temperature of 245 ℃ and continuous operation for about 7 minutes)